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| CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 1/11 MTC2103BJ4 Features N-CH BVDSS ID 30V 8A P-CH -30V -6A 21m 45m RDSON(MAX) * Low Gate Charge * Simple Drive Requirement * 100% UIS test @ VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V, for N-CH * 100% UIS test @ VD=15V, L=0.1mH, VG=-10V, IL=-6A, Rated VDS=-30V, for P-CH * RoHS compliant & Halogen-free package Equivalent Circuit MTC2103BJ4 Outline TO-252-4L GGate DDrain SSource Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Unit Drain-Source Voltage VDS Gate-Source Voltage VGS ID Continuous Drain Current @ TC=25C ID Continuous Drain Current @ TC=100C Pulsed Drain Current *1 IDM Avalanche Current IAS Avalanche Energy @ L=0.1mH, ID=10A(-10A for P-ch),RG=25 EAS Repetitive Avalanche Energy @ L=0.05mH *2 EAR Total Power Dissipation (TC=25) Pd Total Power Dissipation (TC=100) Operating Junction and Storage Temperature Range Tj, Tstg Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle 1% MTC2103BJ4 30 20 8 6 32 15 5 2.5 -30 20 -6 -5 -24 -15 5 2.5 V A mJ W C 25 18 -55~+175 CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Symbol Thermal Resistance, Junction-to-case, max Rth,j-c Thermal Resistance, Junction-to-ambient, max * 1 Rth,j-a 2 Note : *1 62.5C/W when mounted on a 1 in pad of 2 oz copper. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 2/11 Value 6 90 Unit C/W C/W N-CH Characteristics (Tc=25C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg(VGS=10V)*1 Qg(VGS=4.5V)*1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr *1 Qrr *1 Min. 30 1 8 Typ. 1.5 16 18 34 11 6 1.2 3.3 11 16 36 20 1115 116 82 50 2 Max. 3 100 1 25 21 42 2.3 9.2 1.2 Unit V V S nA A A A m m Test Conditions VGS=0, ID=250A VDS =VGS, ID=250A VDS =5V, ID=8A VGS=20, VDS=0 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125C VDS =10V, VGS =10V VGS =10V, ID=8A VGS =4.5V, ID=6A nC ID=8A, VDS=15V, VGS=10V ns VDS=15V, ID=1A, VGS=10V, RG=6 pF VGS=0V, VDS=15V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, VGS=0, dIF/dt=100A/s Note : *1.Pulse Test : Pulse Width 300s, Duty Cycle2% *2.Pulse width limited by maximum junction temperature. MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. P-CH Characteristics (Tc=25C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg(VGS=-10V)*1 Qg(VGS=-4.5V)*1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr *1 Qrr *1 Min. -30 -1 -6 Typ. -1.5 16 36 60 10 7.2 2.2 2 5.5 10 28 15 1320 500 460 55 2.2 Max. -3 100 -1 -25 45 76 -2.3 -9.2 -1.2 Unit V V S nA A A A m m Test Conditions Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 3/11 VGS=0, ID=-250A VDS =VGS, ID=-250A VDS =-5V, ID=-6A VGS=20, VDS=0 VDS =-24V, VGS =0 VDS =-20V, VGS =0, Tj=125C VDS =-5V, VGS =-10V VGS =-10V, ID=-6A VGS =-4.5V, ID=-5A nC ID=-6A, VDS=-15V, VGS=-10V ns VDS=-15V, ID=-1A, VGS=-10V, RG=6 pF VGS=0V, VDS=-15V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, VGS=0, dIF/dt=100A/s Note : *1.Pulse Test : Pulse Width 300s, Duty Cycle2% *2.Pulse width limited by maximum junction temperature. Ordering Information Device MTC2103BJ4 Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Marking 2103 MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves N-Channel 30 V = 10V 6V 7V GS Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 4/11 On-Region Characteristics On-Resistance Variation with Drain Current and Gate Voltage 2.4 2.2 2.0 VGS = 3.5 V 4.0 V 25 ID - Drain Current(A) 20 15 10 5 0 5V RDS(ON) -Normalized Drain-S ource On-Resistance 4.5V 1.8 1.6 1.4 1.2 1.0 0.8 0 6 4.5 V 5.0 V 6.0 V 7.0 V 10 V 4V 3.5V 0 1 2 3 V - Drain S ource Voltage(V) DS 4 5 12 18 ID - Drain Current(A) 24 30 1.9 On-Resistance Variation with Temperature I D = 8A V = 10V GS 0.09 0.08 RDS(ON) - On-Resistance( ) 0.07 0.06 0.05 0.04 0.03 0.02 On-Resistance Variation with Gate-to-S ource Voltage ID = 4 A RDS(on) - Normalized Drain-S ource On-Resistance 1.6 1.3 1.0 TA = 125C TA = 25C 0.7 0.4 -50 0.01 -25 75 0 25 50 TJ - Junction Temperature ( C) 100 125 150 2 4 6 8 VGS- Gate-S ource Voltage( V ) 10 30 V = 10V DS 25 20 15 Transfer Characteristics 100 Body Diode Forward Voltage Variation with S ource Current and Temperature V = 0V GS Is - Reverse Drain Current( A ) 10 TA = 125C ID - Drain Current(A) TA = -55 C 25 C 1 25 C 125C 10 5 0 1 1.5 2.5 2.0 GS V - Gate-S ource Voltage( V ) 3.0 3.5 0.1 -55 C 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 VD - Body Diode Forward Voltage( V ) S 1.2 1.4 MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics ID = 8A VGS - Gate-S ource Voltage( V ) 8 15V Capacitance(pF) 1500 1350 Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 5/11 Capacitance Characteristics f = 1MHz VGS = 0 V Ciss 10 VDS = 5V 10V 1200 1050 900 750 600 450 300 150 6 4 2 0 0 4 8 Q g - Gate Charge( nC ) 12 16 0 0 Coss Crss 5 15 10 VDS - Drain-S ource Voltage( V ) 20 25 30 100 Maximum S Operating Area afe 50 S ingle Pulse Maximum Power Dissipation S ingle Pulse R = 90C/ W JA TA = 25C RDS(ON) Limit 100s 1ms 10ms 100ms P( pk ),Peak Transient Power( W ) 10 ID - Drain Current( A ) 40 30 1 1s 10s DC 20 VGS= 10V 0.1 S ingle Pulse RJA= 90C/ W TA = 25C 0.01 0.1 1 10 VDS - Drain-S ource Voltage( V ) 100 10 0 0.001 0.01 0.1 1 10 100 1000 Transient Thermal Response Curve 1 Duty Cycle = 0.5 r( t ),Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 Notes: PDM t1 t2 0.01 S ingle Pulse 1.Duty Cycle,D = 2.RJA =90C/ W t1 t2 3.TJ - TA = P * R (t) JA 4.R (t)=r(t) + R JA JA 0.001 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 t 1 ,Time (sec) MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) P-Channel Typical Output C haracteristics 25 VGS = -10V 20 RDS(ON) - Normalized Drain-Source On-Resistance Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 6/11 On-R esistance Variation with Drain C urrent and G Voltage ate 2.4 2.2 2.0 1.8 1.6 1.4 1.2 -10V 1.0 0.8 0 5 15 10 -ID Drain C urrent( A) 20 25 -4.5V -6.0V -7.0V -8.0V -6.0V -5.0V -4.5V -4.0V V S = -4V G -I DDrain Current( A ) 15 -3.5V 10 -3.0V 5 0 0 2 1 -V Drain-S ource Voltage( V) DS 3 4 5 RDS(ON) Normalized Drain-S ource On-Resistance O es n-R istanceV ariationwithT perature em 1.6 ID =-6A VS=-10V G 1.4 On-R esistance Variation with G ate-S ource Voltage 0.12 ID= -3A 0.09 RDS(on) - On-Resistance() T = 125C A 1.2 0.06 1.0 0.03 TA = 25C 0.8 0.6 -50 0 -25 0 25 50 75 100 125 150 j unction T T-J em perature( C ) 2 4 6 -V S G G ate-S ource Voltage(V) 8 10 Transfer C haracteristics 15 VDS= -5.0V 12 TA = -55C 25 C 125 C Body Diode F orward Voltage Variation with S ource C urrent and Temperature 100 VSD =0V 10 -IS -Reverse Drain Current( A ) 1 0.1 0.01 0.001 T = 125C A 25 C -55C -I D -Drain Current( A ) 9 6 3 0 1 2 -V S ,G ate-S ource Voltage G 3 4 5 0.0001 0 0.2 0.8 0.4 0.6 -VD - Body Diode F orward Voltage( V) S 1.0 1.2 1.4 MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 7/11 GC ate harge C haracteristics 10 ID =-6A 8 -10V -VGS ,Gate-S ource Voltage( V ) 6 V =-5V DS -15V 1600 1400 1200 1000 Capacitance( pF ) 800 600 400 200 C apacitance C haracteristics f = 1MHZ VS = 0V G C iss 4 C oss C rss 2 0 0 0 2 4 6 Qg ,G C ate harge( nC) 8 10 12 0 5 15 20 10 -V Drain-S ource Voltage( V) DS 25 30 100 RDS(ON)Limit -ID ,Drain Current( A ) 10 Maximum S Operating Area afe S ingle Pulse Maximum Power Dissipation 30 100s 10m s 100m s 1s 1ms 25 20 Power( W ) 15 10 5 0 0.01 S INGLEPULS E R JA = 90C /W TA = 25C 1 10 s DC V = -10V GS S INGLEPULS E R JA = 90C /W TA = 25C 0.01 0.1 0.1 1 10 -V ,Drain-S ource Voltage( V ) DS 100 0.1 1 S ingle Pulse Time( sec ) 10 100 300 Transient Thermal Response Curve 1 D=0.5 r ( t ) ,Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 R R P(pk) 0.02 0.01 JA (t)= r(t) R = 90 C/W JA JA 0.01 t1 SINGLE PULSE t2 Tj - TA = P R JA (t) Duty Cycle,D= t 1 / t 2 0.001 0.0001 0.001 0.01 0.1 t1 , Time( ms ) 1 10 100 1000 MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 8/11 Carrier Tape Dimension MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Recommended soldering footprint Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 9/11 Unit : mm MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 10/11 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3C/second max. (Tsmax to Tp) Preheat 100C -Temperature Min(TS min) -Temperature Max(TS max) 150C -Time(ts min to ts max) 60-120 seconds Time maintained above: -Temperature (TL) 183C - Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 C Time within 5C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6C/second max. 6 minutes max. Time 25 C to peak temperature Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension Marking: Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 11/11 Tab Device Name Date code 2103 Style: Pin 1.Soure 1 2.Gate 1 3.&Tab Drain 1& Drain 2 4. Source 2 5. Gate 2 4-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J4 DIM A A1 B B1 B2 C D D2 D3 Inches Min. Max. 0.0826 0.0984 0.0433 0.0512 0.0118 0.0276 0.0217 0.0295 0.0157 0.0315 0.157 0.0236 0.2087 0.2244 0.2638 0.2874 0.0866 0.1181 Millimeters Min. Max. 2.10 2.50 1.10 1.30 0.30 0.70 0.55 0.75 0.40 0.80 0.40 0.60 5.30 5.70 6.70 7.30 2.20 3.00 DIM E E2 H L L1 L2 L3 P Inches Min. Max. 0.2480 0.2638 0.1890 0.2146 0.3622 0.3996 0.0512 0.0669 0.0354 0.0590 0.0197 0.0433 0.0000 0.0118 0.0461 0.0539 Millimeters Min. Max. 6.30 6.70 4.80 5.45 9.20 10.15 1.30 1.70 0.90 1.50 0.50 1.10 0.00 0.30 1.17 1.37 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead : KFC; Pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC2103BJ4 CYStek Product Specification |
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